BFT92W,115 NXP Semiconductors, BFT92W,115 Datasheet

TRANS PNP 35MA 15V 4GHZ SOT323

BFT92W,115

Manufacturer Part Number
BFT92W,115
Description
TRANS PNP 35MA 15V 4GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFT92W,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
4GHz
Noise Figure (db Typ @ F)
2.5dB ~ 3dB @ 500MHz ~ 1GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
20 @ 15mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
PNP
Maximum Operating Frequency
4000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1656-2
934022960115
BFT92W T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92W
PNP 4 GHz wideband transistor
Product specification
May 1994

Related parts for BFT92W,115

BFT92W,115 Summary of contents

Page 1

DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS May 1994 ...

Page 2

... NXP Semiconductors PNP 4 GHz wideband transistor FEATURES  High power gain  Gold metallization ensures excellent reliability  SOT323 (S-mini) package. APPLICATION It is intended as a general purpose transistor for wideband applications GHz. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage ...

Page 3

... NXP Semiconductors PNP 4 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS ...

Page 4

... NXP Semiconductors PNP 4 GHz wideband transistor 400 P tot (mW) 300 200 100 100 Fig.2 Power derating curve (pF) 0.8 0.6 0.4 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. May 1994 MLB540 150 200 MLB542 ( 500 MHz   Fig.3 DC current gain as a function of collector current, typical values ...

Page 5

... NXP Semiconductors PNP 4 GHz wideband transistor 30 gain (dB  500 MHz MSG = maximum stable gain. Fig.6 Gain as a function of collector current, typical values. 50 gain (dB MSG 5 mA  MSG = maximum stable gain. Fig.8 Gain as a function of frequency, typical values. May 1994 MLB544 gain ...

Page 6

... NXP Semiconductors PNP 4 GHz wideband transistor 180 =  15 mA Fig.10 Common emitter input reflection coefficient (s 180 =  15 mA Fig.11 Common emitter forward transmission coefficient (s May 1994 135 0.5 0.2 3 GHz 0.2 0 0.2 0.5 o 135 135 40 MHz o 3 GHz 135 Product specification 1 ...

Page 7

... NXP Semiconductors PNP 4 GHz wideband transistor 180 =  15 mA Fig.12 Common emitter reverse transmission coefficient (s 180 =  15 mA Fig.13 Common emitter output reflection coefficient (s May 1994 135 3 GHz 0.5 0.4 0.3 0.2 0 MHz o 135 135 0.5 0.2 0.2 0 0.2 3 GHz 0.5 ...

Page 8

... NXP Semiconductors PNP 4 GHz wideband transistor 6 handbook, halfpage F (dB  Fig.14 Minimum noise figure as a function of collector current, typical values. May 1994 MLB552 handbook, halfpage F 1 GHz (dB) 500 MHz (mA  Fig.15 Minimum noise figure as a function of 8 Product specification (MHz) frequency, typical values. ...

Page 9

... NXP Semiconductors PNP 4 GHz wideband transistor 180 =  5 mA 500 MHz Fig.16 Common emitter noise figure circles, typical values. 180 =  5 mA GHz Fig.17 Common emitter noise figure circles, typical values. May 1994 135 0.5 0.2 F min 0 0.5 o 135 ...

Page 10

... NXP Semiconductors PNP 4 GHz wideband transistor SPICE parameters for the BFT92W crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJC 34 TR (1) 35 CJS May 1994 ...

Page 11

... NXP Semiconductors PNP 4 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 May 1994 scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 12

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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