BFT92W,115 NXP Semiconductors, BFT92W,115 Datasheet - Page 2

• Manufacturer Part Number: BFT92W,115
• Description: TRANS PNP 35MA 15V 4GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFT92W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 4GHz
• Noise Figure (db Typ @ F): 2.5dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 20 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1656-2; 934022960115; BFT92W T/R

NXP Semiconductors
FEATURES
 High power gain
 Gold metallization ensures
 SOT323 (S-mini) package.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
May 1994
V
V
I
P
h
C
f
G
F
T
SYMBOL
C
T
FE
excellent reliability
j
CBO
CEO
tot
PNP 4 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain I
noise figure
junction temperature
PARAMETER
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN
1
2
3
open base
up to T
open emitter
I
I
I
f = 500 MHz
f = 500 MHz; T
I
f = 500 MHz
C
C
C
C
C
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
base
emitter
collector
s
= 93 C; note 1
CB
CONDITIONS
DESCRIPTION
= 10 V; f = 1 MHz
2
CE
CE
CE
CE
amb
= 10 V;
= 10 V
= 10 V;
= 10 V;
= 25 C




20





MIN.
handbook, 2 columns
Marking code: W1.




50
0.5
4
17
2.5

Top view
TYP.
Fig.1 SOT323.
Product specification
1
20
15
35
300





150
MAX.
3
BFT92W
MBC870
2
V
V
mA
mW
pF
GHz
dB
dB
C
UNIT