BFT92W,115 NXP Semiconductors, BFT92W,115 Datasheet - Page 5

• Manufacturer Part Number: BFT92W,115
• Description: TRANS PNP 35MA 15V 4GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFT92W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 4GHz
• Noise Figure (db Typ @ F): 2.5dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 20 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1656-2; 934022960115; BFT92W T/R

NXP Semiconductors
May 1994
PNP 4 GHz wideband transistor
f = 500 MHz; V
MSG = maximum stable gain.
I
MSG = maximum stable gain.
C
gain
(dB)
gain
(dB)
= 5 mA; V
Fig.6
50
30
20
10
40
30
20
10
0
0
Fig.8
10
0
G UM
CE
MSG
Gain as a function of collector current,
typical values.
CE
= 10 V.
= 10 V.
Gain as a function of frequency,
typical values.
10
10
2
10
20
3
MSG
G UM
f (MHz)
I
C
(mA)
G max
MLB546
MLB544
10
30
4
5
f = 1 GHz; V
MSG = maximum stable gain.
I
MSG = maximum stable gain.
C
gain
(dB)
gain
(dB)
= 15 mA; V
Fig.7
50
30
20
10
40
30
20
10
0
0
Fig.9
10
0
CE
G UM
MSG
Gain as a function of collector current,
typical values.
CE
= 10 V.
= 10 V.
Gain as a function of frequency,
typical values.
10
10
2
10
20
3
Product specification
MSG
G UM
f (MHz)
I
C
BFT92W
(mA)
G max
MLB547
MLB545
10
30
4