BLF6G22-180PN,135 NXP Semiconductors, BLF6G22-180PN,135 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22-180PN,135
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN,135

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Package / Case: SOT539A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061276135

NXP Semiconductors
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Fig 2.
Fig 4.
(dB)
(dB)
G
G
p
p
22
20
18
16
14
12
21
20
19
18
17
16
15
14
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
0
V
MHz; carrier spacing 5 MHz.
efficiency as functions of average load power;
typical values
2-carrier W-CDMA power gain and drain
2
DS
DS
= 2170.1 MHz.
= 32 V; I
= 32 V; I
10
20
Dq
Dq
100
= 1600 mA; f
= 1600 mA; f
30
40
G
η
D
p
G
1
η
1
200
D
p
= 2162.5 MHz; f
= 2170 MHz;
50
P
L(PEP)
All information provided in this document is subject to legal disclaimers.
001aah633
001aah635
P
60
L(AV)
(W)
(W)
300
70
Rev. 04 — 4 March 2010
2
50
40
30
20
10
0
35
30
25
20
15
10
5
0
= 2167.5
(%)
(%)
η
η
D
D
Fig 3.
Fig 5.
ACPR
(dBc)
(dBc)
IMD
−10
−30
−50
−70
−20
−30
−40
−50
−60
0
0
V
f
Two-tone intermodulation distortion as a
function of peak envelope load power; typical
values
V
MHz; carrier spacing 5 MHz.
2-carrier W-CDMA adjacent channel power
ratio as function of average load power;
typical values
2
DS
DS
= 2170.1 MHz.
BLF6G22(LS)-180PN
= 32 V; I
= 32 V; I
10
20
Dq
Dq
100
= 1600 mA; f
= 1600 mA; f
30
Power LDMOS transistor
40
1
1
200
= 2162.5 MHz; f
= 2170 MHz;
50
IMD5
IMD7
IMD3
P
L(PEP)
© NXP B.V. 2010. All rights reserved.
001aah634
001aah636
P
60
L(AV)
(W)
(W)
300
70
2
= 2167.5
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