BLF6G22-180RN,112 NXP Semiconductors, BLF6G22-180RN,112 Datasheet - Page 2

• Manufacturer Part Number: BLF6G22-180RN,112
• Description: TRANSISTOR POWER LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180RN,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 30V
• Power - Output: 40W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062733112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G22-180RN_22LS-180RN_1
Product data sheet
1.3 Applications
I
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G22-180RN (SOT502A)
1
2
3
BLF6G22LS-180RN (SOT502B)
1
2
3
Type number
BLF6G22-180RN
BLF6G22LS-180RN -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 2000 MHz to 2200 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name Description
-
Rev. 01 — 20 November 2008
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
BLF6G22(LS)-180RN
Simplified outline
1
1
2
2
3
Power LDMOS transistor
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2008. All rights reserved.
0.5
65
2
2
Max
65
+13
49
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 11
Unit
V
V
A
C
C