BF996S,215 NXP Semiconductors, BF996S,215 Datasheet - Page 3

• Manufacturer Part Number: BF996S,215
• Description: MOSFET N-CH 20V 30MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF996S,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 200MHz
• Gain: 25dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 15V
• Configuration: Single Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933754980215::BF996S T/R::BF996S T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8  10  0.7 mm.
April 1991
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G1-S
stg
j
DS
tot
N-channel dual-gate MOS-FET
th j-a
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1 source
gate 2 source
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb (°C)
MGE792
200
up to T
in free air; note 1
amb
3
CONDITIONS
= 60 C; note 1
CONDITIONS






65

MIN.
VALUE
460
Product specification
20
30
30
10
10
200
+150
150
MAX.
BF996S
UNIT
K/W
V
mA
mA
mA
mA
mW
C
C
UNIT