BF996S,215 NXP Semiconductors, BF996S,215 Datasheet - Page 2

MOSFET N-CH 20V 30MA SOT143B

BF996S,215

Manufacturer Part Number
BF996S,215
Description
MOSFET N-CH 20V 30MA SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF996S,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Current Rating
30mA
Frequency
200MHz
Gain
25dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1dB
Current - Test
10mA
Voltage - Test
15V
Configuration
Single Dual Gate
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933754980215::BF996S T/R::BF996S T/R
NXP Semiconductors
FEATURES
 Protected against excessive input voltage surges by
APPLICATIONS
 RF applications such as:
PINNING
QUICK REFERENCE DATA
April 1991
V
I
P
T
C
C
F
SYMBOL
D
Y
integrated back-to-back diodes between gates
and source.
– UHF television tuners
– Professional communication equipment.
j
DS
tot
N-channel dual-gate MOS-FET
ig-1s
rs
fs
PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1 f = 1 MHz; I
feedback capacitance
noise figure
SYMBOL
s, b
g
g
d
2
1
PARAMETER
source
drain
gate 2
gate 1
DESCRIPTION
up to T
f = 1 kHz; I
f = 1 MHz; I
f = 200 MHz G
I
D
= 10 mA; V
amb
D
= 60 C
D
D
= 10 mA; V
= 10 mA; V
= 10 mA; V
DS
S
= 2 mS; B
CONDITIONS
= 15 V; V
2
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
Marking code: MHp.
DS
DS
DS
Fig.1 Simplified outline (SOT143) and symbol.
Top view
GS2
S
= 15 V; V
= 15 V; V
= 15 V; V
= B
= 4 V
Sopt
4
1
;
G2S
G2S
G2S
= 4 V
3
2
= 4 V 2.3
= 4 V 25
18
1
TYP.
MAM039
Product specification
g 2
g 1
20
30
200
150
2.6
MAX.
BF996S
V
mA
mW
C
mS
pF
fF
dB
UNIT
s,b
d

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