BF996S T/R NXP Semiconductors, BF996S T/R Datasheet

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BF996S T/R

Manufacturer Part Number
BF996S T/R
Description
MOSFET TAPE7 MOS-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF996S T/R

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.03 A
Configuration
Single Dual Gate
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-143-4
Fall Time
110 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
200 mW
Rise Time
115 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
135 ns
Part # Aliases
BF996S,215
DISCRETE SEMICONDUCTORS
DATA SHEET
BF996S
N-channel dual-gate MOS-FET
Product specification
April 1991

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BF996S T/R Summary of contents

Page 1

DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification DISCRETE SEMICONDUCTORS April 1991 ...

Page 2

... NXP Semiconductors N-channel dual-gate MOS-FET FEATURES  Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS  RF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN SYMBOL source 2 d drain 3 g gate 2 ...

Page 3

... NXP Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current (DC average drain current D(AV) I gate 1 source G1-S I gate 2 source G1-S P total power dissipation tot T storage temperature range stg T junction temperature ...

Page 4

... NXP Semiconductors N-channel dual-gate MOS-FET STATIC CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I gate cut-off current G1SS I gate cut-off current G2SS V gate-source breakdown voltage (BR)G1-SS V gate-source breakdown voltage (BR)G2-SS I drain current DSS V gate-source cut-off current (P)G1-S V gate-source cut-off current (P)G2-S DYNAMIC CHARACTERISTICS Measuring conditions (common source): I ...

Page 5

... NXP Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B April 1991 scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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