BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 2

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF878_2
Product data sheet
1.3 Applications
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Table 2.
[1]
Table 3.
Pin
1
2
3
4
5
Type number Package
BLF878
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability
Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input and output matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
Connected to flange.
Pinning
Ordering information
Description
drain1
drain2
gate1
gate2
source
Name Description
-
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
Rev. 02 — 15 June 2009
[1]
Simplified outline
1
3
2
4
UHF power LDMOS transistor
5
Graphic symbol
© NXP B.V. 2009. All rights reserved.
BLF878
3
4
1
2
Version
sym117
2 of 18
5