BLF878,112 NXP Semiconductors, BLF878,112 Datasheet

TRANSISTOR RF LDMOS SOT979A

BLF878,112

Manufacturer Part Number
BLF878,112
Description
TRANSISTOR RF LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF878,112

Package / Case
SOT979A
Transistor Type
LDMOS
Frequency
860MHz
Gain
18dB
Voltage - Rated
89V
Current Rating
1.4µA
Current - Test
1.4A
Voltage - Test
40V
Power - Output
300W
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
89 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
300W(Typ)
Power Gain (typ)@vds
21@42VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15.5S
Drain Source Resistance (max)
110(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
190@40VpF
Output Capacitance (typ)@vds
60@40VpF
Reverse Capacitance (typ)
2@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-4738
934061788112
BLF878
BLF878,112
BLF878
1. Product profile
CAUTION
1.1 General description
1.2 Features
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 300 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
Table 1.
RF performance at V
[1]
[2]
I
I
Mode of operation f
CW, class AB
2-Tone, class AB
PAL BG
DVB-T (8k OFDM)
BLF878
UHF power LDMOS transistor
Rev. 02 — 15 June 2009
2-Tone performance at 860 MHz, a drain-source voltage V
drain current I
DVB performance at 858 MHz, a drain-source voltage V
drain current I
Black video signal, sync expansion: input sync = 33 %; output sync
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
N
N
N
N
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Peak envelope power load power = 300 W
Power gain = 21 dB
Drain efficiency = 46 %
Third order intermodulation distortion = 35 dBc
Average output power = 75 W
Power gain = 21 dB
Drain efficiency = 32 %
Third order intermodulation distortion = 32 dBc (4.3 MHz from center frequency)
Typical performance
Dq
Dq
DS
(MHz)
860
f
860 (ch69)
858
= 1.4 A:
= 1.4 A:
1
= 42 V in a common-source 860 MHz narrowband test circuit.
= 860; f
2
= 860.1 -
P
(W)
300
300 (peak sync.)
-
L
[1]
P
(W)
-
300
-
-
L(PEP)
DS
27 %.
DS
of 42 V and a quiescent
of 42 V and a quiescent
P
(W)
-
-
-
75
Product data sheet
L(AV)
G
(dB) (%) (dBc)
21
21
21
21
p
60
46
45
32
D
IMD3
-
-
35
32
[2]

Related parts for BLF878,112

BLF878,112 Summary of contents

Page 1

BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the ...

Page 2

... NXP Semiconductors I Integrated ESD protection I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I High efficiency I Designed for broadband operation (470 MHz to 860 MHz) I Excellent reliability I Internal input and output matching for high gain and optimum broadband operation ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) R th(c-h) [1] R th(j-c) [2] R th(c-h) 6. Characteristics Table unless otherwise specified. j Symbol Parameter V (BR)DSS V GS(th) I DSS I DSX I GSS g fs ...

Page 4

... NXP Semiconductors Fig 1. 7. Application information Table unless otherwise specified. case Mode of operation 2-Tone, class AB DVB-T (8k OFDM) [ 1.4 A for total device. Dq [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. BLF878_2 Product data sheet 350 C oss (pF) 250 150 ...

Page 5

... NXP Semiconductors 7.1 Narrowband RF figures 7.1.1 CW (1) V (2) V Fig 2. BLF878_2 Product data sheet (dB 100 I = 1.4 A; measured in a common source narrowband 860 MHz test circuit power gain and drain efficiency as a function of load power; typical values Rev. 02 — 15 June 2009 BLF878 UHF power LDMOS transistor ...

Page 6

... NXP Semiconductors 7.1.2 2-Tone (dB 100 200 I = 1.4 A; measured in a common source narrowband Dq 860 MHz test circuit Fig 3. 2-Tone power gain and drain efficiency as functions of average load power; typical values BLF878_2 Product data sheet 001aai077 60 IMD3 (1) D (dBc) (2) (%) 300 400 P (W) L(AV) ...

Page 7

... NXP Semiconductors 7.1.3 DVB (2) (dB) ( (1) ( 100 150 I = 1.4 A; measured in a common source narrowband Dq 860 MHz test circuit Fig 5. DVB-T power gain and drain efficiency as functions of average load power; typical values BLF878_2 Product data sheet 001aai079 60 15 IMD3 D (%) (dBc 200 250 0 P (W) ...

Page 8

... NXP Semiconductors 7.2 Broadband RF figures 7.2.1 2-Tone (dB 400 500 600 700 P = 150 1.4 A; measured in a common L(AV) Dq source broadband test circuit as described Fig 7. 2-Tone power gain and drain efficiency as a function of frequency; typical values BLF878_2 Product data sheet 001aai081 80 (2) IMD3 ...

Page 9

... NXP Semiconductors 7.2.2 DVB (dB 400 500 600 700 1.4 A; measured in a common L(AV) Dq source broadband test circuit as described Fig 9. DVB-T power gain and drain efficiency as functions of frequency; typical values 1.4 A; measured in a common source broadband test circuit as described in L(AV) Dq PAR of input signal = 9 0.01 % probability on CCDF. ...

Page 10

... NXP Semiconductors 7.3 Ruggedness in class-AB operation The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V power. 7.4 Impedance information Fig 12. Definition of transistor impedance Table 8. Simulated Z f MHz 300 325 350 375 400 425 450 ...

Page 11

... NXP Semiconductors Table 8. Simulated Z f MHz 925 950 975 1000 7.5 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 13. BLF878 electromigration (I BLF878_2 Product data sheet Typical push-pull impedance and Z device impedance; impedance info 5.103 + j4.467 5 ...

Page 12

... NXP Semiconductors 8. Test information Table 9. List of components For test circuit, see Figure 14, Figure 15 Component Description B1, B2 semi rigid coax C1, C2 multilayer ceramic chip capacitor C3, C9 multilayer ceramic chip capacitor C4 multilayer ceramic chip capacitor C5, C7, C8 multilayer ceramic chip capacitor C6 multilayer ceramic chip capacitor ...

Page 13

... NXP Semiconductors + V G1(test C30 C28 R1 C26 C24 50 C25 L22 B2 L23 C27 R2 C29 C31 G2(test) See Table 9 for a list of components. Fig 14. Class-AB common-source broadband amplifier; V test voltages L23 L22 95 mm Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF878_2 ...

Page 14

... NXP Semiconductors +V G1(test) R7 C28 R3 R5 C30 R1 C26 C25 C27 R2 C31 C29 R8 +V G2(test) See Table 9 for a list of components. Fig 16. Component layout for class-AB common source amplifier BLF878_2 Product data sheet 4 3 C23 C21 C24 C22 C1 C20 12 mm Rev. 02 — 15 June 2009 ...

Page 15

... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads Dimensions (1) Unit max 5.77 11.81 0.15 31.55 mm nom min 4.80 11.56 0.10 30.94 max 0.227 0.465 0.006 1.242 inches nom min 0.189 0.455 0.004 1.218 Note 1. millimeter dimensions are derived from the original inch dimensions. ...

Page 16

... NXP Semiconductors 10. Abbreviations Table 10. Acronym CW CCDF DVB DVB-T ESD IMD3 LDMOS LDMOST OFDM PAL PAR PEP RF TTF UHF VSWR 11. Revision history Table 11. Revision history Document ID Release date BLF878_2 20090615 • Modifications: Table 4 on page • Table 6 on page • Table 7 on page ...

Page 17

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 18

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Narrowband RF figures 7.1 7.1.2 2-Tone 7.1.3 DVB 7.2 Broadband RF figures 7.2.1 2-Tone ...

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