BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 15

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
9. Package outline
Fig 17. Package outline SOT979A
BLF878_2
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
inches
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
Unit
SOT979A
Outline
version
(1)
max
nom
max
nom
min
min
H
U
A
0.227
0.189
5.77
4.80
2
A
A
L
11.81
11.56
0.465
0.455
b
0.006
0.004
0.15
0.10
IEC
c
30.94
1.218
31.55
1.242
D
1
3
31.37
31.12
1.235
1.225
D
1
JEDEC
10.29
10.03
0.405
0.395
E
References
10.29
10.03
0.405
0.395
E
D
U
H
D
q
e
1
1
1
1
Rev. 02 — 15 June 2009
0
13.72
0.540
e
JEITA
scale
b
1.969
1.689
0.078
0.067
5
F
17.50
17.25
0.689
0.679
2
4
10 mm
H
25.53
25.27
1.005
0.995
H
w3
1
5
0.152
0.132
3.86
3.35
L
F
p
0.130
0.120
3.30
3.05
B
C
p
w2
w1
0.119
0.109
3.02
2.77
UHF power LDMOS transistor
Q
European
projection
C
A
35.56
1.400
q
B
E
41.28
41.02
1.625
1.615
1
U
1
© NXP B.V. 2009. All rights reserved.
Q
10.29
10.03
0.405
0.395
U
BLF878
2
Issue date
08-04-24
08-09-04
c
0.010
0.25
w
1
sot979a_po
E
SOT979A
0.010
0.020
0.25
0.51
15 of 18
w
w
3
2