BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 11

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
BLF878_2
Product data sheet
7.5 Reliability
Table 8.
Simulated Z
f
MHz
925
950
975
1000
Fig 13. BLF878 electromigration (I
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)
1
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
Typical push-pull impedance
i
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
0
and Z
L
device impedance; impedance info at V
4
Rev. 02 — 15 June 2009
Z
5.103 + j4.467
5.656 + j4.291
6.205 + j3.963
6.696 + j3.463
i
8
DS(DC)
…continued
, total device)
12
DS
16
= 42 V and P
UHF power LDMOS transistor
Z
3.706
3.556
3.415
3.281
L
20
j0.871
j1.011
j1.157
j1.308
I
L(PEP)
DS(DC)
(10)
(11)
© NXP B.V. 2009. All rights reserved.
001aai087
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
1 / .
BLF878
(A)
= 300 W.
24
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