IRLB3813PBF International Rectifier, IRLB3813PBF Datasheet - Page 8

• Manufacturer Part Number: IRLB3813PBF
• Description: MOSFET N-CH 30V 260A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB3813PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.95 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 260A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 86nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8420pF @ 15V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 260 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 57 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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