IRLB3813PBF International Rectifier, IRLB3813PBF Datasheet - Page 7

• Manufacturer Part Number: IRLB3813PBF
• Description: MOSFET N-CH 30V 260A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB3813PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.95 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 260A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 86nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8420pF @ 15V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 260 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 57 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 16a. Gate Charge Test Circuit
D.U.T
12V
V
GS
Same Type as D.U.T.
Current Regulator
.2µF
ƒ
Fig 15.
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•
•
•
•
SD
50KΩ
3mA
Current Sampling Resistors
•
•
•
.3µF
I
G
-
„
G
HEXFET
D.U.T.
I
D
+
+
-
V
®
DS
Power MOSFETs
+
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Re-Applied
Voltage
Reverse
Recovery
Current
Id
Vgs
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 16b. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Qgodr
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgs2
Vgs(th)
Vds
Qgs1
V
V
I
SD
GS
DD
=10V
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