IRLB3813PBF International Rectifier, IRLB3813PBF Datasheet - Page 3

• Manufacturer Part Number: IRLB3813PBF
• Description: MOSFET N-CH 30V 260A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB3813PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.95 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 260A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 86nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8420pF @ 15V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 260 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 57 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
10000
1000
1000
Fig 1. Typical Output Characteristics
100
100
Fig 3. Typical Transfer Characteristics
0.1
10
10
1
0.1
1
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
3.0V
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
1
3
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 15V
≤60µs PULSE WIDTH
4
10
5
6
100
7
1000
100
10
2.0
1.5
1.0
0.5
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 120A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
3.0V
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
1
≤ 60µs PULSE WIDTH
Tj = 175°C
10
100
3