IRLB3813PBF International Rectifier, IRLB3813PBF Datasheet

MOSFET N-CH 30V 260A TO-220AB

IRLB3813PBF

Manufacturer Part Number
IRLB3813PBF
Description
MOSFET N-CH 30V 260A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLB3813PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.95 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
260A
Vgs(th) (max) @ Id
2.35V @ 150µA
Gate Charge (qg) @ Vgs
86nC @ 4.5V
Input Capacitance (ciss) @ Vds
8420pF @ 15V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
260 A
Power Dissipation
230 W
Mounting Style
Through Hole
Gate Charge Qg
57 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLB3813PBF
Manufacturer:
TE
Quantity:
69
Part Number:
IRLB3813PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLB3813PBF
Quantity:
2 500
Company:
Part Number:
IRLB3813PBF
Quantity:
20 000
Applications
l
l
l
Notes  through
Benefits
l
l
l
l
V
V
I
I
I
P
P
T
T
R
R
R
www.irf.com
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJC
θCS
θJA
@ T
@ T
and Current
Converters with Synchronous Rectification
Optimized for UPS/Inverter Applications
High Frequency Isolated DC-DC
Power Tools
@T
@T
for Telecom and Industrial Use
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
Lead-Free
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
are on page 9
at 4.5V V
g
GS
f
Parameter
Parameter
GS
GS
g
g
@ 10V
@ 10V
V
30V 1.95m Ω @V
DSS
Gate
G
IRLB3813PbF
R
HEXFET
DS(on)
300 (1.6mm from case)
D
Typ.
0.50
–––
–––
10lb
TO-220AB
Drain
-55 to + 175
max
GS
D
x
in (1.1N
Max.
260
190
1050
®
± 20
230
120
1.6
30
= 10V
Power MOSFET
h
h
G
D
x
Max.
S
m)
0.64
–––
62
Qg (typ.)
Source
57nC
S
07/03/09
97407
Units
Units
W/°C
°C/W
°C
W
V
A
1

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IRLB3813PBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance g R Junction-to-Case θJC R Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient θJA Notes  through are on page 9 † www.irf.com IRLB3813PbF V DSS 30V 1.95m Ω Gate Parameter @ 10V GS @ 10V Parameter f 97407 ® HEXFET ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

VGS TOP 10V 9.0V 7.0V 5.5V 4.5V 4.0V 1000 3.5V BOTTOM 3.0V 100 ≤ 60µs PULSE WIDTH Tj = 25°C 3. Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Limited By Package 250 200 150 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 ...

Page 6

25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V D.U 20V V GS 0.01 ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 15. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 16a. Gate Charge ...

Page 8

TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com ...

Page 9

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.45mH 48A. AS ƒ Pulse ...

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