FDC610PZ Fairchild Semiconductor, FDC610PZ Datasheet - Page 4

• Manufacturer Part Number: FDC610PZ
• Description: MOSFET P-CH 30V 4.9A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC610PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1005pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.042Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC610PZTR

FDC610PZ Rev.B
Typical Characteristics
Figure 9.
10
10
10
10
10
10
10
10
10
Figure 7.
10
8
6
4
2
0
-1
-2
-3
5
4
3
2
1
0
1000
0
0
100
0.5
10
I
10
1
D
V
DS
= -4.9A
-4
Gate Leakage Current vs Gate to
= 0V
5
Gate Charge Characteristics
-V
4
V
T
GS ,
Source Voltage
GS
J
= 150
10
= -10V
GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE(nC)
V
o
C
DD
10
8
= -10V
15
-3
Figure 11. Single Pulse Maximum Power Di
T
20
J
V
12
DD
= 25°C unless otherwise noted
= -20V
T
J
25
V
= 25
10
DD
-2
16
= -15V
o
C
30
t, PULSE WIDTH (s)
20
35
10
-1
4
0.01
2000
1000
0.1
10
100
30
50
1
0.1
10
0.1
0
THIS AREA IS
LIMITED BY r
Figure 8.
SINGLE PULSE
T
R
T
J
A
Figure 10.
f = 1MHz
V
θ
JA
= MAX RATED
GS
= 25
= 156
= 0V
ssipation
o
-V
-V
C
DS
to Source Voltage
DS
o
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
DS(on)
10
1
Forward Bias Safe
1
1
10
10
C
C
C
oss
rss
SINGLE PULSE
R
T
iss
2
A
θ
JA
= 25
= 156
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10
o
C
1s
10s
100us
100ms
DC
o
1ms
10ms
C/W
100
30
10
3