FDC610PZ Fairchild Semiconductor, FDC610PZ Datasheet - Page 2

• Manufacturer Part Number: FDC610PZ
• Description: MOSFET P-CH 30V 4.9A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC610PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1005pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.042Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC610PZTR

FDC610PZ Rev.B
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
I
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
g
∆T
∆T
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25°C unless otherwise noted
a. 78°C/W when mounted on a
1 in
2
pad of 2 oz copper.
V
V
V
V
I
I
I
V
V
V
I
V
V
V
V
V
f = 1MHz
f = 1MHz
F
D
D
D
DD
GS
GS
GS
DS
GS
DS
GS
GS
GS
GS
GS
DD
= –4.9A, di/dt = 100A/µs
= –250µA, V
= –250µA, referenced to 25°C
= –250µA, referenced to 25°C
= –15V, I
= –10V, R
= 0V to –10V
= 0V to –4.5V
= 0V, I
= –24V, V
= –15V, V
= ±25V, V
= V
= –10V, I
= –4.5V, I
= –10V, I
= –10V, I
DS
2
Test Conditions
, I
S
= –1.3A
D
D
D
D
D
D
GS
GS
DS
GEN
GS
= –250µA
= –4.9A
= –4.9A
= –3.7A
= –4.9A, T
= –4.9A
= 0V
= 0V
= 0V,
= 0V
= 6Ω
V
I
D
DD
= –4.9A
(Note 2)
= –15V,
J
= 125°C
θJC
is guaranteed by design while R
Min
–30
–1
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
–2.2
–0.8
Typ
755
145
125
–22
2.9
4.3
33
23
17
36
58
50
15
13
19
7
4
9
6
9
1005
Max
–1.3
–1.2
±10
195
190
θCA
–1
–3
42
75
60
14
10
53
37
24
13
35
18
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
nC
µA
µA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
Ω
A
V
V
V
S