FDC610PZ Fairchild Semiconductor, FDC610PZ Datasheet

MOSFET P-CH 30V 4.9A SSOT-6

FDC610PZ

Manufacturer Part Number
FDC610PZ
Description
MOSFET P-CH 30V 4.9A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDC610PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
42 mOhm @ 4.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1005pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
4.9 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.042Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±25V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SuperSOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC610PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC610PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
132 410
Part Number:
FDC610PZ
Manufacturer:
FAIRCHILD
Quantity:
1 563
Part Number:
FDC610PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC610PZ
0
Company:
Part Number:
FDC610PZ
Quantity:
69 000
Company:
Part Number:
FDC610PZ
Quantity:
12 000
Part Number:
FDC610PZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC610PZ_NL
Manufacturer:
ON/安森美
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FDC610PZ Rev.B
FDC610PZ
P-Channel PowerTrench
–30V, –4.9A, 42mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJA
Max r
Max r
Low gate charge (17nC typical).
High performance trench technology for extremely low r
SuperSOT
standard SO–8) low profile (1mm thick).
RoHS Compliant
, T
Device Marking
Symbol
STG
DS(on)
DS(on)
.610Z
TM
= 42mΩ at V
= 75mΩ at V
–6 package: small footprint (72% smaller than
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
D
D
Pin 1
GS
GS
SuperSOT
FDC610PZ
Device
S
= –10V, I
= –4.5V, I
-Pulsed
D
TM
D
D
= –4.9A
-6
D
= –3.7A
T
®
A
G
= 25°C unless otherwise noted
MOSFET
Parameter
Package
SSOT6
DS(on).
1
General Description
This
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management,
circuits, and DC/DC conversion.
Application
DC - DC Conversion
Reel Size
P-Channel
7’’
D
D
G
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
MOSFET
1
2
3
3
Tape Width
8mm
is
–55 to +150
produced
Ratings
–4.9
–30
±25
–20
156
1.6
0.8
78
®
6
4
5
process that has
battery charging
August 2007
using
D
S
3000units
www.fairchildsemi.com
Quantity
D
Fairchild
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDC610PZ

FDC610PZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .610Z FDC610PZ ©2007 Fairchild Semiconductor Corporation FDC610PZ Rev.B ® MOSFET General Description = –4.9A This P-Channel D Semiconductor’s advanced PowerTrench = –3.7A D been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance ...

Page 2

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDC610PZ Rev 25°C unless otherwise noted J Test Conditions I = –250µ –250µA, referenced to 25°C ...

Page 3

... JUNCTION TEMPERATURE ( T J Figure 3. Normalized On- Resistance vs Junction Temperature 20 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDC610PZ Rev 25°C unless otherwise noted J PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX V = -4. - -3. 100 125 150 150 - ...

Page 4

... 150 GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 1000 V = -10V GS 100 Figure 11. Single Pulse Maximum Power Di FDC610PZ Rev 25°C unless otherwise noted J 2000 1000 V = -15V -20V DD 100 0 0. PULSE WIDTH ( iss C oss C rss f = 1MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R = 156 θ FDC610PZ Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ Build it Now™ Green FPS™ e-Series™ CorePLUS™ GTO™ ...

Related keywords