FDC610PZ Fairchild Semiconductor, FDC610PZ Datasheet - Page 3

• Manufacturer Part Number: FDC610PZ
• Description: MOSFET P-CH 30V 4.9A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC610PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1005pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.042Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC610PZTR

FDC610PZ Rev.B
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
20
15
10
20
15
10
Figure 3. Normalized On- Resistance
5
0
Figure 1.
5
0
-75
1
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
V
I
DD
D
GS
-50
= -4.9A
vs Junction Temperature
= -5V
= -10V
-V
T
-V
-25
J
On-Region Characteristics
DS
GS
,
2
JUNCTION TEMPERATURE (
1
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
GS
0
= -5V
T
V
25
J
GS
µ
= 25
s
T
= -10V
3
2
J
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= 150
o
50
C
T
J
= 25°C unless otherwise noted
o
C
75
T
4
o
3
100 125 150
J
C )
V
= -55
V
V
GS
GS
GS
= -4.5V
= -4V
= -3.5V
o
C
µ
s
5
4
3
1E-3
0.01
200
150
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
20
10
50
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
3
0
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
-V
T
4
= -3.5V
0.2
J
-V
SD
= 0V
I
D
= 25
T
GS
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
= -4.9A
On-Resistance vs Gate to
J
,
= 150
-I
Source Voltage
5
o
Source to Drain Diode
GATE TO SOURCE VOLTAGE
D
C
,
5
DRAIN CURRENT(A)
V
0.4
o
GS
C
= -4V
T
J
6
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
0.6
10
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
o
C
7
V
GS
0.8
T
= -4.5V
8
J
15
= -55
T
(
www.fairchildsemi.com
J
V
V
V
= 25
1.0
GS
)
GS
o
C
9
µ
= -5V
= -10V
s
o
C
µ
s
1.2
20
10