NDS9957 Fairchild Semiconductor, NDS9957 Datasheet - Page 6

• Manufacturer Part Number: NDS9957
• Description: MOSFET 2N-CH 60V 2.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9957

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9957TR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
8
6
4
2
0
0
0 .0 0 5
0 .0 0 2
0 .0 0 1
Current and Temperature.
0 .0 5
0 .0 2
0 .0 1
0 .5
0 .2
0 .1
0 .0001
1
V
DS
=10V
2
D = 0.5
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
I
0.2
D
0.1
, DRAIN CURRENT (A)
0.05
4
0 .001
depending on the circuit board design.
0.02
0.01
Single Pulse
6
T = -55°C
J
0 .0 1
(continued)
25°C
8
125°C
1 0
0 .1
t , TIME (sec)
1
0.03
0.01
0.3
0.1
2 0
1 0
3
1
0.1
Figure 14. Maximum Safe Operating Area.
.
R
0.2
SINGLE PULSE
1
V
J A
T
A
GS
= 100 C/W
= 25°C
= 10V
0.5
V
o
DS
, DRAIN-SOURCE VOLTAGE (V)
1
P(pk)
T - T
Duty Cycle, D = t
1 0
R
J
2
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
5
1 0
JA
1
/ t
(t)
JA
1 0 0
2
3 0 0
6 0
NDS9957.SAM
1 0 0