NDS9957 Fairchild Semiconductor, NDS9957 Datasheet - Page 5

• Manufacturer Part Number: NDS9957
• Description: MOSFET 2N-CH 60V 2.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9957

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9957TR

Typical Electrical Characteristics
V
GS
5 0 0
3 0 0
2 0 0
1 0 0
5 0
2 0
1 0
1.12
1.08
1.04
0.96
0.92
Figure 9. Capacitance Characteristics.
0.1
Figure 7. Breakdown Voltage Variation with
1
-50
Figure 11. Switching Test Circuit
0.2
R
Temperature.
I
GEN
D
-25
f = 1 MHz
V
GS
= 250µA
V
= 0V
0.5
DS
T
0
J
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
IN
1
G
25
2
50
D
S
V
DD
5
75
R
L
1 0
(continued)
D U T
100
2 0 3 0
C iss
125
C oss
C rss
V
O U T
150
6 0
V
V
t
0.001
OUT
d(on)
0.01
IN
1 0
0.1
Figure 10. Gate Charge Characteristics.
Figure 8. Body Diode Forward Voltage Variation
1 0
8
6
4
2
0
1
1 0 %
0.2
0
Figure 12. Switching Waveforms
I
D
V
with Current and Temperature.
= 2.6A
GS
T = 125°C
J
0.4
= 0V
t
V
5 0 %
o n
SD
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
2
t
9 0 %
PULSE WIDTH
0.6
r
Q
g
, GATE CHARGE (nC)
25°C
0.8
4
t
d(off)
V
-55°C
DS
5 0 %
1
= 5V
9 0 %
6
t
1 0 %
off
1.2
9 0 %
1 0 V
3 0 V
NDS9957.SAM
INVERTED
t
f
1.4
8