NDS9957 Fairchild Semiconductor, NDS9957 Datasheet - Page 4

• Manufacturer Part Number: NDS9957
• Description: MOSFET 2N-CH 60V 2.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9957

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9957TR

Typical Electrical Characteristics
1 0
8
6
4
2
0
1 0
1.8
1.6
1.4
1.2
0.8
0.6
0.4
1
8
6
4
2
0
2
1
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
0
-50
Figure 1. On-Region Characteristics.
V
DS
with Temperature.
V
V
-25
I
GS
= 10V
D
G S
= 2.6A
2
=10V
= 10V
1
V
GS
V
0
T , JUNCTION TEMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
6.0 5.0
2 5
3
2
4.5
T = -55°C
5 0
J
4
4.0
3
7 5
2 5
3.5
100
3.0
5
4
2.5
1 2 5
125
150
6
5
1.2
1.1
0.9
0.8
0.7
0.6
2.5
1.5
0.5
2.5
1.5
0.5
1
2
1
Figure 4. On-Resistance Variation with Drain
Figure 2. On-Resistance Variation with Gate Voltage
-50
3
2
1
0
0
Figure 6. Gate Threshold Variation with
Current and Temperature.
and Drain Current.
V
-25
GS
V
= 10 V
Temperature.
GS
2
2
= 3.0V
0
T , JUNCTION TEMPERATURE (°C)
J
I
I
D
D
2 5
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
4
4
3.5
5 0
T = 125°C
J
6
6
7 5
4.0
25°C
100
I
V
-55°C
D
4.5
DS
= 250µA
8
8
5.0
= V
6.0
125
GS
1 0
NDS9957.SAM
150
1 0
1 0