HGT1S12N60A4DS Fairchild Semiconductor, HGT1S12N60A4DS Datasheet - Page 7

• Manufacturer Part Number: HGT1S12N60A4DS
• Description: IGBT SMPS N-CH 600V D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S12N60A4DS

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Typical Performance Curves
Test Circuit and Waveforms
©2001 Fairchild Semiconductor Corporation
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
10
-1
-2
0
10
R
-5
0.50
0.20
0.10
0.05
0.02
0.01
G
= 10
SINGLE PULSE
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
-4
L = 500 H
DUT
HGTP12N60A4D
DIODE TA49371
+
-
Unless Otherwise Specified (Continued)
V
10
DD
t
-3
1
= 390V
, RECTANGULAR PULSE DURATION (s)
10
-2
V
V
I
CE
GE
CE
FIGURE 25. SWITCHING TEST WAVEFORMS
t
10
d(OFF)I
90%
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
-1
10%
DUTY FACTOR, D = t
PEAK T
t
fI
J
P
D
= (P
E
OFF
90%
D
X Z
10
t
1
0
t
E
JC
2
1
ON2
/ t
X R
10%
2
t
d(ON)I
JC
) + T
t
rI
C
10
1