HGT1S12N60A4DS Fairchild Semiconductor, HGT1S12N60A4DS Datasheet

IGBT SMPS N-CH 600V D2PAK

HGT1S12N60A4DS

Manufacturer Part Number
HGT1S12N60A4DS
Description
IGBT SMPS N-CH 600V D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGT1S12N60A4DS

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector (ic) (max)
54A
Power - Max
167W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Power Dissipation Pd
167W
Collector Emitter Voltage V(br)ceo
600V
Continuous Collector Current Ic
54A
Collector Emitter Saturation Voltage Vce(sat)
2.7V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGT1S12N60A4DS
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGT1S12N60A4DS
Quantity:
400
©2001 Fairchild Semiconductor Corporation
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
Symbol
HGTG12N60A4D
HGTP12N60A4D
HGT1S12N60A4DS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
TO-220AB
TO-263AB
PACKAGE
C
E
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
12N60A4D
12N60A4D
12N60A4D
o
C and 150
BRAND
o
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
C. The
HGTG12N60A4D, HGTP12N60A4D,
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
• Low Conduction Loss
• Temperature Compensating SABER™ Model
• Related Literature
Packaging
www.fairchildsermi.com
- TB334 “Guidelines for Soldering Surface Mount
COLLECTOR
Components to PC Boards
(FLANGE)
December 2001
JEDEC TO-220AB ALTERNATE VERSION
G
E
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
JEDEC STYLE TO-247
JEDEC TO-263AB
HGT1S12N60A4DS
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
(FLANGE)
G
COLLECTOR
E
C
(FLANGE)
E
C
G
4,587,713
4,644,637
4,801,986
4,883,767
J
= 125
o
C

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HGT1S12N60A4DS Summary of contents

Page 1

... SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... GEM 60A at 600V 167 D 1. -55 to 150 J STG 300 L 260 pkg MIN TYP 600 - 125 2 125 15V 15V - 20V - 160 - 125 110 - 250 - 175 HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B UNITS MAX UNITS - V 250 A 2.0 mA 2 250 120 170 350 J 285 J ...

Page 3

... V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B MAX UNITS - 0.75 C/W o 2.0 C/W ON2 500 600 700 300 275 250 225 200 175 150 125 SC 100 ...

Page 4

... COLLECTOR TO EMITTER VOLTAGE (V) CE 400 500 390V G CE 350 300 125 12V OR 15V 250 J GE 200 150 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 500 390V 125 12V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev 2.5 = 12V OR 15V 125 15V ...

Page 5

... L = 500 390V 125 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA G(REF 600V 400V 200V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 500 390V 15V TOTAL ON2 OFF I = 24A 12A 0 100 R , GATE RESISTANCE ( ) G HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev 12V OR 15V 1000 ...

Page 6

... 125 FORWARD CURRENT (A) EC 400 V = 390V CE o 125 12A EC 350 300 o 125 250 200 150 100 50 0 200 300 400 500 600 700 di /dt, RATE OF CHANGE OF CURRENT ( CURRENT HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev 15V 18A 12A 12A 800 900 1000 ...

Page 7

... Test Circuit and Waveforms L = 500 FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued RECTANGULAR PULSE DURATION (s) 1 HGTP12N60A4D DIODE TA49371 DUT + 390V DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev ...

Page 8

... A 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev d(OFF)I ). The ON2 - T )/ ...

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