HGT1S12N60A4DS Fairchild Semiconductor, HGT1S12N60A4DS Datasheet - Page 5

• Manufacturer Part Number: HGT1S12N60A4DS
• Description: IGBT SMPS N-CH 600V D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S12N60A4DS

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
250
200
150
100
115
110
105
100
50
95
90
85
0
1.2
1.0
0.8
0.6
0.4
0.2
6
2
0
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
25
R
FIGURE 13. TRANSFER CHARACTERISTIC
G
R
E
= 10 , L = 500 H, V
G
4
7
TOTAL
EMITTER CURRENT
= 10 , L = 500 H, V
TEMPERATURE
I
CE
6
, COLLECTOR TO EMITTER CURRENT (A)
V
8
GE
50
= E
, GATE TO EMITTER VOLTAGE (V)
T
ON2
8
C
9
, CASE TEMPERATURE (
+ E
10
10
OFF
CE
75
CE
V
V
GE
GE
CE
12
= 10V
= 390V
11
= 12V, V
= 390V, V
= 12V, V
14
T
J
12
100
= -55
GE
GE
16
I
I
I
CE
CE
GE
CE
= 15V, T
Unless Otherwise Specified (Continued)
= 15V, T
13
o
= 24A
= 12A
T
= 15V
= 6A
C
18
J
o
C)
= 25
125
14
T
J
20
J
o
J
C
= 125
= 25
= 125
15
22
o
o
C
o
C
C
150
24
16
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
16
14
12
10
0.1
8
6
4
2
0
10
90
80
70
60
50
40
30
20
10
1
0
2
5
I
G(REF)
R
T
V
E
V
FIGURE 14. GATE CHARGE WAVEFORMS
G
J
CE
TOTAL
CE
= 125
4
= 10 , L = 500 H, V
10
= 600V
= 390V, V
10
CURRENT
I
I
I
= 1mA, R
CE
CE
CE
I
CE
= E
o
6
V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
, COLLECTOR TO EMITTER CURRENT (A)
C, L = 500 H,
= 12A
= 6A
CE
= 24A
ON2
20
T
J
= 200V
GE
8
R
= 125
L
Q
+ E
G
= 15V
= 25 , T
G
, GATE RESISTANCE ( )
V
, GATE CHARGE (nC)
OFF
10
30
CE
o
C, V
= 400V
CE
12
C
GE
= 390V
40
T
= 25
J
= 12V OR 15V
= 25
100
14
o
C
o
50
C, V
16
GE
18
60
= 12V OR 15V
20
70
22
1000
24
80