HGT1S12N60A4DS Fairchild Semiconductor, HGT1S12N60A4DS Datasheet - Page 4

• Manufacturer Part Number: HGT1S12N60A4DS
• Description: IGBT SMPS N-CH 600V D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S12N60A4DS

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
18
17
16
15
14
13
12
11
10
700
600
500
400
300
200
100
24
20
16
12
8
4
0
0
2
0
R
2
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
G
R
G
T
= 10 , L = 500 H, V
4
J
= 10 , L = 500 H, V
4
V
= 125
EMITTER CURRENT
EMITTER CURRENT
I
CE
I
CE
CE
6
0.5
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
6
, COLLECTOR TO EMITTER CURRENT (A)
o
C, V
8
8
GE
10
T
= 12V, V
10
J
1.0
= 125
CE
GE
CE
T
12
T
J
= 390V
T
12
J
= 25
J
= 12V
= 390V
GE
o
T
= 25
= 25
C
J
14
= 150
= 15V
o
14
C, T
o
o
1.5
C, T
C, V
o
J
16
16
C
J
= 125
GE
= 125
Unless Otherwise Specified (Continued)
= 12V, V
18
18
o
T
o
C, V
J
C, V
2
= 25
20
20
GE
GE
GE
o
= 15V
C
= 15V
22
= 12V
22
2.5
24
24
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
400
350
300
250
200
150
100
50
32
28
24
20
16
12
24
20
16
12
0
8
4
0
8
4
0
2
2
0
R
R
G
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
G
= 10 , L = 500 H, V
4
= 10 , L = 500 H, V
T
4
J
T
EMITTER CURRENT
EMITTER CURRENT
V
I
= 125
J
I
CE
CE
CE
= 125
6
0.5
6
, COLLECTOR TO EMITTER CURRENT (A)
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
o
C, V
o
8
C OR T
8
GE
T
10
10
J
= 12V OR 15V
1.0
T
= 125
J
CE
CE
J
= 25
GE
= 25
12
12
= 390V
= 390V
T
o
= 15V
J
o
T
C
o
C, V
= 150
J
C OR T
14
14
= 25
GE
1.5
o
o
C
16
= 12V
C, V
16
J
= 125
GE
18
18
= 12V OR 15V
o
C, V
T
2
J
20
20
= 25
GE
= 15V
o
22
22
C
2.5
24
24