BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 6

• Manufacturer Part Number: BLF6G20-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19.2@28VdB
• Frequency (min): 1.805GHz
• Frequency (max): 2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 14%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-45,135

NXP Semiconductors
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Fig 7.
Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) (
See
Component layout for 1805 MHz and 1880 MHz test circuit
C4
Table 8
C3
C5
R1 C6
for list of components.
C1
Rev. 02 — 25 August 2008
C2
BLF6G20-45; BLF6G20S-45
r
= 2.2), thickness = 0.79 mm.
C8 C10
C9
Power LDMOS transistor
C11
C7
C14
C12
© NXP B.V. 2008. All rights reserved.
C15
C13
001aah551
C16
6 of 12