BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 10

• Manufacturer Part Number: BLF6G20-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19.2@28VdB
• Frequency (min): 1.805GHz
• Frequency (max): 2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 14%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-45,135

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Document ID
BLF6G20-45_BLF6G20S-45_2 20080825
Modifications:
BLF6G20-45_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
IMD
LDMOS
PAR
PDPCH
RF
VSWR
W-CDMA
Release date
20060220
•
•
•
Abbreviations
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP semiconductors.
Legal texts have been adapted to the new company name where appropriate.
The document now describes both the eared and earless version of this product:
BLF6G20-45 and BLF6G20S-45 respectively.
Rev. 02 — 25 August 2008
Data sheet status
Product data sheet
Objective data sheet -
Wideband Code Division Multiple Access
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
InterModulation Distortion
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
BLF6G20-45; BLF6G20S-45
Change notice
-
Supersedes
BLF6G20-45_1
-
Power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
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