BLF6G20-230PRN,118 NXP Semiconductors, BLF6G20-230PRN,118 Datasheet

TRANSISTOR PWR LDMOS SOT539A

BLF6G20-230PRN,118

Manufacturer Part Number
BLF6G20-230PRN,118
Description
TRANSISTOR PWR LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20-230PRN,118

Transistor Type
LDMOS
Frequency
1.81GHz ~ 1.88GHz
Gain
17.5dB
Voltage - Rated
65V
Current - Test
2A
Voltage - Test
28V
Power - Output
65W
Package / Case
SOT539A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063293118
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
230 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF6G20-230PRN;
BLF6G20S-230PRN
Power LDMOS transistor
Rev. 02 — 9 February 2010
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 65 W
Power gain = 17.5 dB
Efficiency = 32 %
ACPR = −32 dBc
Typical performance
case
= 25
°
C in a common source class-AB production test circuit.
f
(MHz)
1805 to 1880
Dq
of 2000 mA:
V
(V)
28
DS
P
(W)
65
L(AV)
Product data sheet
G
(dB)
17.5
p
η
(%)
32
D
ACPR
(dBc)
−31
[1]

Related parts for BLF6G20-230PRN,118

BLF6G20-230PRN,118 Summary of contents

Page 1

... BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...

Page 2

... Table 2. Pin BLF6G20-230PRN (SOT539A BLF6G20S-230PRN (SOT539B [1] Connected to flange 3. Ordering information Table 3. Type number BLF6G20-230PRN BLF6G20S-230PRN - BLF6G20-230PRN_20S-230PRN_2 Product data sheet Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...

Page 3

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor Conditions = 80 °C; T case L(AV) Conditions Min ...

Page 4

... Mode of operation: 1-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH 2000 mA Symbol Parameter PAR O 7.1 Ruggedness in class-AB operation The BLF6G20-230PRN and BLF6G20S-230PRN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G20-230PRN_20S-230PRN_2 Product data sheet Application information = 1802.5 MHz 2000 mA ...

Page 5

... 100 2000 mA One-tone CW power gain and drain efficiency as functions of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor 001aal412 60.00 η D (%) 46.66 33.33 20.00 6.66 200 300 P (W) L © ...

Page 6

... L(M) 200 100 2000 mA 2-carrier W-CDMA peak output power and output peak-to-average ratio as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor −20 −40 (1) (2) (3) (4) −60 − ...

Page 7

... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor BLF6G20-230PRN INPUT REV2 R04350 NXP Value Remarks 24 pF ATC100A 4.7 μF TDK 33 pF ATC8008 ...

Page 8

... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor 3.48 3 ...

Page 9

... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor 25.53 3.48 2 ...

Page 10

... Product data sheet • Data sheet status changed to productive data sheet. • Data sheet expanded to include the BLF6G20S-230PRN transistor. • Section 12 “Legal information” 20081202 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 ...

Page 11

... NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20-230PRN_20S-230PRN_2 All rights reserved. Date of release: 9 February 2010 ...

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