BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 5

• Manufacturer Part Number: BLF6G20-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19.2@28VdB
• Frequency (min): 1.805GHz
• Frequency (max): 2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 14%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-45,135

NXP Semiconductors
8. Test information
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Fig 4.
Fig 6.
(dB)
V
G
GG
p
25
23
21
19
17
15
0
V
MHz; carrier spacing 5 MHz.
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
See
Test circuit for operation at 1805 MHz and 1880 MHz
input
50
DS
= 28 V; I
C3
Table 8
3
C4
for list of components.
Dq
= 360 mA; f
6
C5
R1
9
1
= 1840.5 MHz; f
C6
12
P
001aah548
G
L(AV)
C1
D
p
C2
(W)
Rev. 02 — 25 August 2008
15
2
= 1845.5
50
40
30
20
10
0
(%)
D
BLF6G20-45; BLF6G20S-45
Fig 5.
ACPR
(dBc)
20
30
40
50
60
0
V
MHz; carrier spacing 5 MHz.
2-carrier W-CDMA adjacent power channel
ratio as function of average load power;
typical values
C8
DS
= 28 V; I
C9
3
Dq
C7
= 360 mA; f
C10
6
C11
Power LDMOS transistor
C16
C15
9
1
= 1840.5 MHz; f
C12
© NXP B.V. 2008. All rights reserved.
12
P
C13
001aah549
L(AV)
output
50
(W)
001aah550
15
2
C14
= 1845.5
V
DD
5 of 12