BLF6G38LS-100 NXP Semiconductors, BLF6G38LS-100 Datasheet - Page 5

• Manufacturer Part Number: BLF6G38LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38LS-100,112

NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 3.
Fig 4.
(dB)
G
P
16
14
12
10
8
6
3400
V
Adjacent channel power ratio as a function of average load power; typical values
V
PAR = 9.7 dB at 0.01 % probability.
Power gain and drain efficiency as function of
frequency; typical values
DS
DS
= 28 V; I
= 28 V; I
7.3.1 Graphs
7.3 Single carrier NA IS-95 broadband performance at 2 W average
3450
Dq
Dq
= 1050 mA; f = 3500 MHz.
= 1050 mA; Single Carrier IS-95;
3500
G
η
D
P
ACPR
(dBc)
−25
−35
−45
−55
−65
3550
10
−1
All information provided in this document is subject to legal disclaimers.
f (MHz)
001aaj037
3600
Rev. 2 — 24 October 2011
BLF6G38-100; BLF6G38LS-100
25
24
23
22
21
20
(%)
η
1
D
Fig 5.
ACPR
(dBc)
10
(1) Low frequency component
(2) High frequency component
−40
−50
−60
−70
3400
P
L(AV)
ACPR
ACPR
ACPR
V
PAR = 9.7 dB at 0.01 % probability.
Adjacent channel power ratio as a function of
frequency; typical values
DS
ACPR
ACPR
ACPR
001aaj036
= 28 V; I
(W)
10M
20M
30M
3440
1500k
1980k
885k
10
2
Dq
WiMAX power LDMOS transistor
= 1050 mA; single carrier IS-95;
3480
3520
(1)
(2)
(1)
(2)
(2)
(1)
3560
© NXP B.V. 2011. All rights reserved.
001aaj039
f (MHz)
3600
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