BLF6G38LS-100 NXP Semiconductors, BLF6G38LS-100 Datasheet - Page 2

• Manufacturer Part Number: BLF6G38LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38LS-100,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G38-100_6G38LS-100_1
Product data sheet
1.3 Applications

Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G38-100 (SOT502A)
1
2
3
BLF6G38LS-100 (SOT502B)
1
2
3
Type number
BLF6G38-100
BLF6G38LS-100 -
Symbol
V
I
T
V
T
D
stg
j
DS
GS
RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to
3600 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 2 — 24 October 2011
BLF6G38-100; BLF6G38LS-100
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
3
3
Graphic symbol
-
Min
-
0.5
-
65
© NXP B.V. 2011. All rights reserved.
2
2
Max
65
+13
34
+150
200
sym112
sym112
SOT502B
Version
SOT502A
1
3
1
3
2 of 13
Unit
V
V
A
C
C