BLF6G38LS-100 NXP Semiconductors, BLF6G38LS-100 Datasheet - Page 4

• Manufacturer Part Number: BLF6G38LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38LS-100,112

NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 1.
EVM
(%)
10
8
6
4
2
0
10
V
EVM as a function of load power;
typical values
−1
DS
= 28 V; I
7.2.1 WiMAX signal description
7.2.2 Graphs
7.2 NXP WiMAX signal
Dq
1
= 1050 mA; f = 3500 MHz.
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
FFT = 1024; zone type = PUSC;  = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol  30 subchannels; P
Table 8.
Frame contents
Zone 0
Zone 0
Zone 0
FCH
data
data
10
Frame structure
P
2 symbols  4 subchannels
2 symbols  26 subchannels
44 symbols  30 subchannels
All information provided in this document is subject to legal disclaimers.
L
001aaj033
(W)
10
Rev. 2 — 24 October 2011
BLF6G38-100; BLF6G38LS-100
2
Fig 2.
(dB)
G
P
18
16
14
12
10
L
10
= P
V
Power gain and drain efficiency as function of
average load power; typical values
−1
DS
L(nom)
= 28 V; I
Modulation technique
QPSK 1/2
64 QAM 3/4
64 QAM 3/4
+ 3.86 dB.
Dq
WiMAX power LDMOS transistor
1
= 1050 mA; f = 3500 MHz.
G
η
D
P
10
g
/ T
P
L(AV)
© NXP B.V. 2011. All rights reserved.
b
= 1 / 8;
001aaj034
(W)
Data length
3 bit
692 bit
10000 bit
10
2
40
30
20
10
0
(%)
η
D
4 of 13