BLF6G38LS-100 NXP Semiconductors, BLF6G38LS-100 Datasheet - Page 3

• Manufacturer Part Number: BLF6G38LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38LS-100,112

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
T
7. Application information
Table 7.
Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes
8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f
f
production circuit.
BLF6G38-100_6G38LS-100_1
Product data sheet
Symbol
R
Symbol
V
V
I
I
I
g
R
C
Symbol
P
G
RL

ACPR
ACPR
3
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L(M)
th(j-case)
DS(on)
rs
= 3600 MHz; RF performance at V
p
= 25
in
885k
1980k

C per section; unless otherwise specified.
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from junction to case
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
Parameter
peak output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz)
7.1 Ruggedness in class-AB operation
[1]
The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
Measured within 30 kHz bandwidth.
= 28 V; I
DS
Dq
= 28 V; I
= 1050 mA; P
All information provided in this document is subject to legal disclaimers.
Dq
Conditions
V
V
V
V
V
V
V
V
Rev. 2 — 24 October 2011
BLF6G38-100; BLF6G38LS-100
GS
DS
GS
GS
GS
DS
GS
GS
= 1050 mA; T
= 10 V; I
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
=0 V; V
Conditions
T
case
GS(th)
GS(th)
L
= P
D
= 80 C; P
DS
DS
D
D
= 0.6 mA
+ 3.75 V; V
+ 3.75 V; I
DS
L(1dB)
= 180 mA
= 6.3 A
case
= 28 V
= 28 V; f = 1 MHz
= 0 V
Conditions
P
P
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 25
; f = 3600 MHz.
L(AV)
D
= 18.5 W
= 18.5 W
= 18.5 W
= 18.5 W
= 18.5 W
= 18.5 W

DS
C; unless otherwise specified, in a class-AB
= 6.3 A
= 18.5 W BLF6G38-100
= 10 V
WiMAX power LDMOS transistor
-
[1]
[1]
Min
65
1.4
-
26.5
-
-
-
Type
BLF6G38LS-100
Min
110
11.5
-
18.5
-
-
1
= 3400 MHz; f
Typ
-
2
-
33
-
12
0.09
2.6
Typ
130
13
10
21.5
47.5
65
© NXP B.V. 2011. All rights reserved.
2
Max
-
-
-
-
45
63
Max
-
2.4
5
-
450
-
0.15
-
Typ
0.58
0.43
= 3500 MHz;
Unit
W
dB
dB
%
dBc
dBc
Unit
K/W
K/W
Unit
V
V
A
A
nA
S

pF
3 of 13