NE650103M NEC, NE650103M Datasheet - Page 2

• Manufacturer Part Number: NE650103M
• Description: RF GaAs RO 551-NE650103M-A
• Manufacturer: NEC

Specifications of NE650103M

• Mounting Style: SMD/SMT
• Gate-source Breakdown Voltage: - 18 V
• Continuous Drain Current: 5 A
• Power Dissipation: 33 W
• Package / Case: 79A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
NE650103M
Note:
1. Operation in excess of any one of these parameters may result
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
in permanent damage.
T
V
V
V
T
I
I
P
STG
DS
GF
GD
GS
CH
DS
T
10
9
8
7
6
5
4
3
2
1
0
0
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
0.5 1.0
DRAIN TO SOURCE VOLTAGE
Drain To Source Voltage, (V)
PARAMETERS
DRAIN CURRENT vs.
1.5
2.0 2.5
V
GS
= 0 V
V
3.0
GS
= -0.5 V
V
GS
3.5 4.0
I
V
V
DS
= -1.0 V
V
DS
GS
V
V
GS
= 1 A/Div
GS
GS
UNITS
= 0.5 V/Div
= -0.5 V
= -1.5 V
mA
°C
°C
= -2.0 V
= -2.5 V
W
V
V
V
A
4.5
1
5.0
(T
-65 to +150
RATINGS
C
-7.0
175
(T
= 25 °C)
-18
15
45
33
5
A
= 25°C)
ORDERING INFORMATION
RECOMMENDED OPERATING LIMITS
SYMBOLS
G
NE650103M-A
V
T
PART NUMBER
COMP
R
CH
DS
g
35
33 W
30
25
20
15
10
0
0
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
PARAMETERS
18
TOTAL POWER DISSIPATION vs.
43
Case Temperature, T
CASE TEMPERATURE
50
100
UNITS
dB
°C
C
Ω
V
150
(°C)
PACKAGE
175
3M
TYP
10.0
200
MAX
10.0
150
100
3.0