UPA572T NEC, UPA572T Datasheet

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UPA572T

Manufacturer Part Number
UPA572T
Description
MOS type composite field effect transistor
Manufacturer
NEC
Datasheet

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Document No. G11244EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
FEATURES
• Two source common MOS FET circuits in package the
• Directly driven by 3 V power supply
• Automatic mounting supported
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
The PA572T is a super-mini-mold device provided with
same size as SC-70
PARAMETER
N-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
SYMBOL
I
V
I
D(pulse)
V
D(DC)
T
T
T
P
DSS
GSS
opt
stg
ch
T
DATA SHEET
FOR SWITCHING
A
V
V
PW
= 25 ˚C)
GS
DS
= 0
= 0
10 ms, Duty Cycle
MOS FIELD EFFECT TRANSISTOR
TEST CONDITIONS
PACKAGE DIMENSIONS (in millimeters)
EQUIVALENT CIRCUIT
50 %
5
1
0.65
0.2
2.0 ±0.2
2
1.3
+0.1
–0
0.65
4
3
PIN CONNECTION
1.
2.
3.
4.
5.
Marking: DB
PA572T
–55 to +150
200 (Total)
–55 to +80
Gate 1
Source
Gate 2
Drain 2
Drain 1
RATINGS
150
30
100
200
0.15
7
0.9 ±0.1
(G1)
(common)
(G2)
(D2)
(D1)
©
0.7
+0.1
–0.05
UNIT
mW
0 to 0.1
mA
mA
˚C
˚C
˚C
V
V
1996

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UPA572T Summary of contents

Page 1

... D(DC ms, Duty Cycle 50 % D(pulse opt T stg PA572T +0.1 +0.1 0.2 0.15 –0 –0. 0.1 0.7 0.65 0.65 0.9 ±0.1 1.3 2.0 ±0.2 4 PIN CONNECTION 1. Gate 1 (G1) 2. Source (common) 3. Gate 2 (G2) 4. Drain 2 (D2) 5. Drain 1 (D1) Marking RATINGS UNIT 100 mA 200 mA 200 (Total) ...

Page 2

ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State Resistance R DS(on)1 Drain to Source On-State Resistance R DS(on)2 ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Case Temperature - ˚C C TRANSFER CHARACTERISTICS 500 ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed measurement 150 ˚ ˚ ˚C –25 ˚ Drain Current - ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide PA572T Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 6

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance ...

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