UPA836TF NEC, UPA836TF Datasheet

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UPA836TF

Manufacturer Part Number
UPA836TF
Description
Twin transistors equipped with different model chips(6P small MM)
Manufacturer
NEC
Datasheet

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Part Number:
UPA836TF
Manufacturer:
MAXIM
Quantity:
9 450
Document No. P12728EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
DESCRIPTION
and Q2) for low noise amplification in the VHF band to UHF
band.
FEATURES
• Low noise
• High gain
• 6-pin thin-type small mini mold package
• 2 different transistors on-chip (2SC5193, 2SC4959)
ON-CHIP TRANSISTORS
ORDERING INFORMATION
Caution is required concerning excess input, such as from stati
process is used for this device.
3-pin small mini mold part No.
PART NUMBER
Q1 : NF = 1.5 dB TYP. @f = 2 GHz, V
Q2 : NF = 1.7 dB TYP. @f = 2 GHz, V
Q1 : S
Q2 : S
PA836TF
PA836TF-T1
The PA836TF has two different built-in transistors (Q1
The PA833TF features the Q1 and Q2 in inverted positions.
21e
21e
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
2
2
= 8.5 dB TYP. @f = 2 GHz, V
= 3.5 dB TYP. @f = 2 GHz, V
Taping products
Loose products
(3 kpcs/reel)
QUANTITY
(50 pcs)
The information in this document is subject to change without notice.
PRELIMINARY DATA SHEET
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
2SC4959
CE
CE
Q1
PACKING STYLE
CE
CE
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
C
C
= 3 mA
= 3 mA
C
C
2SC5193
= 10 mA
= 3 mA
Q2
c electricity , becaus e the high-frequency
PACKAGE DRAWINGS (Unit:mm)
PIN CONFIGURATION (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
Q1
B1
C1
6
1
Silicon Transistor
PA836TF
E2
E1
2
5
2.10±0.1
1.25±0.1
Q2
C2
B2
4
3
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
©
1997

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UPA836TF Summary of contents

Page 1

... Q1 Q2 PIN CONFIGURATION (Top View) 2SC4959 2SC5193 PACKING STYLE 8-mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 PIN CONNECTIONS Emitter), and pin 4 (Q2 Base) 1. Collector (Q1) face perforated side of tape. 2. Emitter (Q1) 3. Collector (Q2) c electricity , becaus e the high-frequency Silicon Transistor PA836TF 2.10± ...

Page 2

... T Feedback capacitance Insertion power gain 21e Noise figure NF Notes 1. Pulse measurement: PW 350 s, Duty cycle 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter RATING 150 in 1 element 200 in 2 elements 150 ...

Page 3

... Insertion power gain (2) 21e Noise figure (1) NF Noise figure (2) NF Notes 1. Pulse measurement: PW 350 s, Duty cycle 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter. h CLASSIFICATION FE Rank FB Marking V47 h value of Q1 ...

Page 4

TYPICAL CHARACTERISTICS ( Total Power Dissipation vs. Ambient Temperature Free Air 2 elements in total 200 Q1 when using 1 element Q1 when using 2 elements 100 0 50 100 Ambient temperature Collector Current ...

Page 5

Q1 DC Current Gain vs. Collector Current 200 100 0 0.1 0.2 0 Collector current I (mA) C Gain Bandwidth Product vs. Collector Current ...

Page 6

Q1 Noise Figure vs. Collector Current GHz 0 Collector current I (mA) C Feedback Capacitance vs. Collector to Base Voltage 0 MHz ...

Page 7

S-PARAMETERS mA FREQUENCY S11 GHz MAG ANG .10 .98 5.93 .20 .97 11.90 .30 .95 18.17 .40 .93 24.00 .50 .90 30.10 .60 .87 36.17 .70 ...

Page 8

S-PARAMETERS mA FREQUENCY S11 GHz MAG ANG .10 .90 12.12 .20 .84 23.51 .30 .77 34.84 .40 .69 45.03 .50 .60 54.58 .60 .52 62.89 .70 ...

Page 9

S-PARAMETERS mA FREQUENCY S11 GHz MAG ANG .10 .97 14.32 .20 .95 28.41 .30 .91 42.45 .40 .88 55.88 .50 .83 69.17 .60 .79 81.80 .70 ...

Page 10

S-PARAMETERS mA FREQUENCY S11 GHz MAG ANG .10 .84 26.28 .20 .75 50.58 .30 .64 73.48 .40 .56 93.24 .50 .49 109.26 .60 .45 122.23 .70 ...

Page 11

S-PARAMETERS mA FREQUENCY S11 GHz MAG ANG .10 .70 38.41 .20 .56 71.49 .30 .45 97.54 .40 .39 116.40 .50 .35 130.54 .60 .34 141.64 .70 ...

Page 12

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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