NE650103M NEC, NE650103M Datasheet

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NE650103M

Manufacturer Part Number
NE650103M
Description
RF GaAs RO 551-NE650103M-A
Manufacturer
NEC
Datasheet

Specifications of NE650103M

Mounting Style
SMD/SMT
Gate-source Breakdown Voltage
- 18 V
Continuous Drain Current
5 A
Power Dissipation
33 W
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DESCRIPTION
NEC's NE650103M is a 10 W GaAs MESFET designed for
PCS, W-CDMA, WLL transmitter applications. It is capable of
delivering 10 Watts of output power with high linear gain, high
efficiency and excellent linearity. Reliability and performance
uniformity are assured by NEC's stringent quality and control
procedures
ELECTRICAL CHARACTERISTICS
FEATURES
• LOW COST PLASTIC PACKAGE
• USABLE TO 2.7 GHz:
• HIGH OUTPUT POWER:
• HIGH POWER ADDED EFFICIENCY:
• LOW THERMAL RESISTANCE:
• LEAD-FREE
PCS, W-CDMA, WLL, Satellite Uplink, BWA
40 dBm TYP
45 % TYP at 2.3 GHz
4.0° C/W
SYMBOLS
η
P
I
R
G
DSS
V
ADD
1dB
TH
P
L
Power Out at 1dB Gain Compression
Linear Gain (at Pin ≤ 23 dBm)
Power Added Efficiency
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
CHARACTERISTICS
PACKAGE OUTLINE
PART NUMBER
NEC'
POWER GaAs MESFET
(T
C
= 25°C)
S
10 W L & S-BAND
UNITS
°C/W
dBm
dB
%
A
V
OUTLINE DIMENSIONS
2-φ 3.3 ± 0.3
39.0
10.0
MIN
-4.0
2.0
2.04 ± 0.3
California Eastern Laboratories
NE650103M
TYP
40.0
11.0
-2.5
3M
5.0
4.0
45
PACKAGE OUTLINE 3M
DRAIN
GATE
20.32 ± 0.15
14.27 ± 0.15
8.54 ± 0.2
3.5 ± 0.2
MAX
-1.0
7.0
4.5
NE650103M
(Units in mm)
SOURCE
f = 2.3 GHz, V
V
I
0.15 ± 0.05
DSQ
V
DS
TEST CONDITIONS
DS
Channel to Case
= 2.5 V; I
= 2.5 V; V
≤ 1.5 A (RF OFF)
Rg = 100 Ω
DS
DS
GS
= 10.0 V
= 23 mA
= 0 V

Related parts for NE650103M

NE650103M Summary of contents

Page 1

... LOW THERMAL RESISTANCE: 4.0° C/W • LEAD-FREE DESCRIPTION NEC's NE650103M GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control ...

Page 2

... RECOMMENDED OPERATING LIMITS ( °C) C SYMBOLS UNITS RATINGS - -7.0 COMP 175 °C ORDERING INFORMATION -65 to +150 °C PART NUMBER NE650103M 25° A/Div = 0.5 V/Div 4.5 5.0 PARAMETERS UNITS TYP Drain to Source Voltage V 10.0 Channel Temperature °C Gain Compression dB Gate Resistance Ω ...

Page 3

TYPICAL PERFORMANCE CURVES OUTPUT POWER AND POWER ADDED EFFICIENCY 1.5 A DSQ F = 880 MHz 40 P out 35 30 PAE Input Power, ...

Page 4

... 100 f (GHz) 1.45 80 1.50 1.55 2.57 60 2.60 2. SOURCE Impedance of the input circuit as seen by the Gate SOURCE Z = Impedance of the output circuit as seen by the Drain LOAD NE650103M INTERMODULATION DISTORTION vs. OUTPUT POWER - - 1.5 A DSQ F1=2.2975 GHz -20 F2=2.3025 GHz -25 -30 -35 -40 -45 -50 -55 IM3 -60 IM5 -65 20 ...

Page 5

... NE650103M TYPICAL SCATTERING PARAMETERS NE650103M 1 FREQUENCY S 11 GHz MAG ANG 0.500 0.950 -166.801 0.550 0.948 -168.706 0.600 0.948 -170.446 0.650 0.949 -171.829 0.700 0.948 -173.218 0.750 0.948 -174.376 0.800 0.947 -175.359 0.850 0.946 -176.410 0.900 0.947 -177.310 0.950 0.946 -178.122 1.000 ...

Page 6

... NE650103M TYPICAL SCATTERING PARAMETERS NE650103M 1 FREQUENCY S 11 GHz MAG ANG 0.50 0.953 -165.8 0.55 0.954 -167.4 0.60 0.954 -168.9 0.65 0.954 -170.2 0.70 0.955 -171.3 0.75 0.953 -172.3 0.80 0.951 -173.3 0.85 0.953 -174.3 0.90 0.951 -175.0 0.95 0.952 -175.7 1.00 ...

Page 7

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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