BFP 410 H6327 Infineon Technologies, BFP 410 H6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 410 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BFP 410 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Other names: BFP410H6327XT

Power gain G
V
f = parameter in GHz
Noise figure F = ƒ (I
V
CE
CE
dB
dB
= 2V
= 2 V, Z
4.5
3.5
2.5
1.5
0.5
40
32
28
24
20
16
12
8
4
0
3
2
1
0
0
0
4
4
S
ma
8
= Z
8
, G
12
Sopt
ms
12
C
16
)
= ƒ (I
16
20
C
20
24
f= 10.0 GHz
f= 5.5 GHz
f= 2.4 GHz
f= 1.8 GHz
f= 0.9 GHz
f= 0.45 GHz
)
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
28 mA
24 mA
I
I
C
C
30
36
5
Power gain G
I
f = parameter in GHz
Noise figure F = ƒ (I
V
C
CE
= 13 mA
dB
dB
= 2 V, f = 2 GHz
2.5
1.5
0.5
40
32
28
24
20
16
12
8
4
0
4
3
2
1
0
0
0
1
4
ma
, G
2
8
ms
C
)
= ƒ (V
12
3
ZS=50Ohm
ZS=ZSopt
CE
16
4
2010-04-09
)
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
BFP410
mA
V
V
I
C
CE
24
6