BFP 193W E6327 Infineon Technologies, BFP 193W E6327 Datasheet

TRANSISTOR NPN RF 12V SOT-343

BFP 193W E6327

Manufacturer Part Number
BFP 193W E6327
Description
TRANSISTOR NPN RF 12V SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 193W E6327

Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain
13.5dB ~ 20.5dB
Power - Max
580mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
8 GHz
Collector- Emitter Voltage Vceo Max
12 V
Continuous Collector Current
0.08 A
Power Dissipation
580 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 193W E6327
BFP193WE6327INTR
BFP193WE6327XT
SP000011026
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP193W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
T
= 8 GHz, F = 1 dB at 900 MHz
66°C
thJA
Marking
RCs
please refer to Application Note Thermal Resistance
2)
3)
1 = E 2 = C 3 = E 4 = B -
1)
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
4
-55 ... 150
-55 ... 150
-
3
Value
Value
580
150
12
20
20
80
10
145
2
Package
SOT343
2007-04-20
BFP193W
1
2
Unit
V
mA
mW
°C
Unit
K/W

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BFP 193W E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For low noise, high-gain amplifiers GHz For linear broadband amplifiers GHz 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

... MJS = 3 XTI = - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www ...

Page 5

Total power dissipation P tot 600 mW 500 450 400 350 300 250 200 150 100 Permissible Pulse Load totmax totDC ...

Page 6

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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