BFP 410 H6327 Infineon Technologies, BFP 410 H6327 Datasheet - Page 2

• Manufacturer Part Number: BFP 410 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BFP 410 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Other names: BFP410H6327XT

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
(verified by random sampling)
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CE
CB
EB
= 1 mA, I
= 13 mA, V
= 0.5 V, I
= 2 V, V
= 5 V, V
= 2 V, I
B
E
BE
BE
= 0
C
= 0
CE
= 0
= 0
= 0 , T
thJA
= 2 V, pulse measured
please refer to Application Note Thermal Resistance
A
= 85 °C
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
4.5
60
-
-
-
-
Values
0.001
typ.
95
5
1
2
1
max.
2010-04-09
130
0.6
30
50
30
-
BFP410
Unit
V
nA
µA
-