BFP 520F E6327 Infineon Technologies, BFP 520F E6327 Datasheet
BFP 520F E6327
Specifications of BFP 520F E6327
BFP520FE6327INTR
BFP520FE6327XT
SP000012987
Related parts for BFP 520F E6327
BFP 520F E6327 Summary of contents
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NPN Silicon RF Transistor* For highest gain low noise amplifier at 1.8 GHz and Outstanding Noise Figure F = 0.95 dB For oscillators GHz Transition frequency f ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...
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... MJS = 0.35 - XTI = All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: The TSFP-4 package has two emitter leads. To avoid high complexity fo the package equivalent circuit, both leads are combined in one electrical connection ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...