PESD36VS2UT NXP Semiconductors, PESD36VS2UT Datasheet - Page 4

• Manufacturer Part Number: PESD36VS2UT
• Description: DIODE,DUAL ESD TVS,UNI DIR,36V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD36VS2UT

• Reverse Stand-off Voltage Vrwm: 36V
• Breakdown Voltage Range: 40V
• Clamping Voltage Vc Max: 60V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 2.5A
• Diode Case Style: SOT-23
• No. Of: RoHS Compliant

NXP Semiconductors
6. Characteristics
PESD36VS2UT_1
Product data sheet
Table 8.
T
[1]
[2]
Symbol
Per diode
V
I
V
C
V
r
RM
amb
dif
Fig 3.
RWM
BR
CL
d
Measured from pin 1 or 2 to pin 3.
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
= 25 C unless otherwise specified.
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Characteristics
amb
(pF)
C
= 25 C
d
Rev. 01 — 16 July 2009
20
15
10
Low capacitance unidirectional double ESD protection diode
5
0
0
10
Conditions
V
I
f = 1 MHz;
V
I
I
R
PP
R
RWM
R
= 5 mA
= 0.5 mA
= 0 V
= 1 A
= 30 V
20
30
[1][2]
[1]
V
006aab615
R
PESD36VS2UT
Min
-
-
40
-
-
-
(V)
40
Typ
-
< 0.02
44
17
55
-
© NXP B.V. 2009. All rights reserved.
Max
36
1
-
35
60
300
Unit
V
V
pF
V
A
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