PESD36VS2UT NXP Semiconductors, PESD36VS2UT Datasheet - Page 3

• Manufacturer Part Number: PESD36VS2UT
• Description: DIODE,DUAL ESD TVS,UNI DIR,36V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD36VS2UT

• Reverse Stand-off Voltage Vrwm: 36V
• Breakdown Voltage Range: 40V
• Clamping Voltage Vc Max: 60V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 2.5A
• Diode Case Style: SOT-23
• No. Of: RoHS Compliant

NXP Semiconductors
PESD36VS2UT_1
Product data sheet
Fig 1.
(%)
I
PP
120
80
40
0
0
8/20 s pulse waveform according to
IEC 61000-4-5
10
100 % I
Table 6.
T
[1]
[2]
Table 7.
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
amb
e
ESD
PP
t
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
; 8 s
20
= 25 C unless otherwise specified.
50 % I
Parameter
electrostatic discharge voltage
ESD maximum ratings
ESD standards compliance
PP
30
; 20 s
001aaa630
t ( s)
40
Rev. 01 — 16 July 2009
Low capacitance unidirectional double ESD protection diode
Fig 2.
100 %
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
10 %
90 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
t
r
30 ns
0.7 ns to 1 ns
PESD36VS2UT
60 ns
[1][2]
[2]
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
001aaa631
Max
30
400
8
t
Unit
kV
V
kV
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