PESD36VS2UT NXP Semiconductors, PESD36VS2UT Datasheet - Page 2

• Manufacturer Part Number: PESD36VS2UT
• Description: DIODE,DUAL ESD TVS,UNI DIR,36V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD36VS2UT

• Reverse Stand-off Voltage Vrwm: 36V
• Breakdown Voltage Range: 40V
• Clamping Voltage Vc Max: 60V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 2.5A
• Diode Case Style: SOT-23
• No. Of: RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PESD36VS2UT_1
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Pin
1
2
3
Type number
PESD36VS2UT
Type number
PESD36VS2UT
Symbol
Per diode
P
I
Per device
T
T
T
PP
j
amb
stg
PP
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
Description
cathode (diode 1)
cathode (diode 2)
common anode
Pinning
Ordering information
Marking codes
Limiting values
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Package
Name
-
Rev. 01 — 16 July 2009
Low capacitance unidirectional double ESD protection diode
Description
plastic surface-mounted package; 3 leads
Conditions
t
t
p
p
= 8/20 s
= 8/20 s
Simplified outline
Marking code
LF*
1
3
PESD36VS2UT
[1][2]
[1][2]
[1]
2
Min
-
-
-
55
65
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
160
2.5
150
+150
+150
1
3
Version
SOT23
006aaa154
Unit
W
A
2
C
C
C
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