AUIRF2907ZS-7P International Rectifier, AUIRF2907ZS-7P Datasheet - Page 9

• Manufacturer Part Number: AUIRF2907ZS-7P
• Description: MOSFET N-CH 75V 180A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907ZS-7P

• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab), TO-263CB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com

‚
+
-
D.U.T
ƒ
+
-
SD
Fig 17.
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
G
„
t
d(on)
+
HEXFET
t
r
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
f
P.W.
SD
DS
Waveform
Waveform
+
-
Ripple
Body Diode
Period
Body Diode Forward
for N-Channel
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
9