AUIRF2907ZS-7P International Rectifier, AUIRF2907ZS-7P Datasheet

AUIRF2907ZS-7P

Manufacturer Part Number

AUIRF2907ZS-7P

Description

MOSFET N-CH 75V 180A D2PAK-7

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF2907ZS7PTL.pdf (13 pages)

Specifications of AUIRF2907ZS-7P

Input Capacitance (ciss) @ Vds

7580pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.8 mOhm @ 110A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

180A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Power - Max

300W

Mounting Type

Surface Mount

Package / Case

TO-263-7, D²Pak (6 leads + Tab), TO-263CB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRF2907ZS-7P

Manufacturer:

Quantity:

12 500

Current page: 1 of 13
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Features

Description

Absolute Maximum Ratings

indicated in the specifications is not implied.

HEXFET

*Qualification standards can be found at http://www.irf.com/

Specifically designed for Automotive applications, this

HEXFET

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

this design an extremely efficient and reliable device for use

in Automotive applications and a wide variety of other

applications.

Absolute Maximum Ratings

Thermal Resistance

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest processing

www.irf.com

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

functional operation of the device at these or any other condition beyond those

Parameter

@ 10V (Silicon Limited)

AUTOMOTIVE GRADE

Gate

AUIRF2907ZS-7P

Typ.

See Fig.12a,12b,15,16

0.50

–––

10 lbf•in (1.1N•m)

HEXFET

Drain

-55 to + 175

D (Silicon Limited)

(BR)DSS

DS(on)

Max.

180

120

700

300

± 20

160

410

300

2.0

typ.

max.

Max.

0.50

–––

Power MOSFET

Source

PD - 96321

3.8m

3.0m

180A

Units

W/°C

°C/W

75V

°C

Related parts for AUIRF2907ZS-7P

AUIRF2907ZS-7P Summary of contents

Page 1

... International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE G functional operation of the device at these or any other condition beyond those Parameter @ 10V (Silicon Limited 10V (Silicon Limited Parameter i h AUIRF2907ZS-7P ® HEXFET Power MOSFET V D (BR)DSS R typ. DS(on) max (Silicon Limited ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 25° 175° ...

Page 5

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 6

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 1.0E-06 1.0E-05 200 TOP Single Pulse BOTTOM 1% Duty Cycle 110A 150 100 100 Starting Junction Temperature ...

Page 9

D.U.T + ƒ ‚ - SD www.irf.com Reverse Recovery „ Current - + Re-Applied G + Voltage - Fig 17. ® HEXFET Power MOSFETs Fig 18a. Switching Time Test Circuit V DS 90% 10 ...

Page 10

D Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches Pak - 7 Pin Part Marking Information 10 www.irf.com ...

Page 11

D Pak - 7 Pin Tape and Reel www.irf.com 11 ...

Page 12

... Ordering Information Base part number Package Type AUIRF2907ZS-7P D2Pak 12 Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRF2907ZS-7P AUIRF2907ZS7PTL AUIRF2907ZS7PTR www.irf.com ...

Page 13

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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