AUIRF2907ZS-7P International Rectifier, AUIRF2907ZS-7P Datasheet - Page 4

• Manufacturer Part Number: AUIRF2907ZS-7P
• Description: MOSFET N-CH 75V 180A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907ZS-7P

• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab), TO-263CB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
1000
100
100
0.1
10
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
1
T J = 175°C
V DS , Drain-to-Source Voltage (V)
2
V GS , Gate-to-Source Voltage (V)
4.5V
1
3
4
10
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
60µs PULSE WIDTH
5
T J = 25°C
TOP
BOTTOM
100
6
7
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
8
1000
200
150
100
100
50
10
0
0.1
0
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
25
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
1
T J = 25°C
50
vs. Drain Current
4.5V
75
V DS = 10V
380µs PULSE WIDTH
10
Tj = 175°C
60µs PULSE WIDTH
T J = 175°C
100
TOP
BOTTOM
100
125
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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150
1000