AUIRF2907ZS-7P International Rectifier, AUIRF2907ZS-7P Datasheet - Page 6

• Manufacturer Part Number: AUIRF2907ZS-7P
• Description: MOSFET N-CH 75V 180A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907ZS-7P

• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab), TO-263CB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
200
160
120
80
40
0
Fig 9. Maximum Drain Current vs.
25
0.0001
0.001
0.01
0.1
1
1E-006
Case Temperature
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T C , Case Temperature (°C)
D = 0.50
0.20
0.10
0.05
0.02
75
0.01
SINGLE PULSE
( THERMAL RESPONSE )
100
1E-005
125
150
t 1 , Rectangular Pulse Duration (sec)
175
0.0001
J
J
1
Ci= i Ri
1
Ci
3.0
2.5
2.0
1.5
1.0
0.5
i Ri
R
1
-60 -40 -20 0 20 40 60 80 100120140160180
R
0.001
1
I D = 180A
V GS = 10V
Fig 10. Normalized On-Resistance
2
R
2
2
R
2
T J , Junction Temperature (°C)
R
3
3
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
vs. Temperature
3
3
C
Ri (°C/W)
0.1072
0.2787
0.1143
0.01
0.000096
0.002614
0.013847
i (sec)
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0.1